PART |
Description |
Maker |
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
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International Rectifier, Corp. IRF[International Rectifier]
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MGP20N60U |
Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
IRGBC20FD2 |
600V Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier Vectron International, Inc.
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IRGBC30U |
600V Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier
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KRH10A20 KRH10A15 KRH10A10 KRH10A045 KRH10A06 FRH1 |
ITO-220AB 10.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers Unit : inch (mm)
|
Thinki Semiconductor Co...
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FS1209BH00TU FS1209DH00TU FS1209MH00TU FS1209NH00T |
12 A, 200 V, SCR, TO-220AB 12 A, 400 V, SCR, TO-220AB 12 A, 600 V, SCR, TO-220AB 12 A, 800 V, SCR, TO-220AB
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BUZ73A-E3045 |
5.5 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Infineon Technologies AG SIEMENS AG
|
SUP85N04-04-E3 |
85 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Vishay Intertechnology, Inc.
|
BUZ73AL-E3045 |
5.5 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG Infineon Technologies AG
|
IRG4BC20F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce(on)典\u003d 1.66V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0
|
IRF[International Rectifier] International Rectifier, Corp.
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64001-0300 19130-0044 19130-0046 19154-0015 64001- |
Assorted Non-Insulated and PVC Insulated Quick Disconnect, Ring, Spade and Butt
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MolexKits http://
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